MOSFET

Features

  • Configuration:Single-N

  • VDS(V):20V,VGS(V):12V,ID(A):0.3A

  • RDS@VGS=10V(mΩ):--

  • RDS@VGS=4.5V(mΩ):500 mΩ

  • RDS@VGS=2.5V(mΩ):700 mΩ

  • VGS(th)(V)min:0.5V

  • VGS(th)(V)typ:0.8V

  • VGS(th)(V)max :1.1V

  • Package:SOT-523

Applications

  • Cellular phones,Portable devices,Digital cameras,Power supplies

SBD

Features

  • Low power loss , high efficiency

  • Low forward voltage drop

  • High surge capability

  • High temperature soldering guaranteed

Applications

  • Cellular phones,Portable devices,Digital cameras,Power supplies

TVS

Features

  • Voltage Range:5.0-440V

  • power:600Wa

  • Low profile Glass passivated package

  • Low inductance

Applications

  • Cellular phones,Portable devices,Digital cameras,Power supplies

ESD

Features

  • 300W peak pulse power per line (tP = 8/20μs)

  • DFN1006-2L package

  • Replacement for MLV(0402)

  • Bidirectional configurations

  • Low clamping voltage

  • RoHS compliant

  • Transient protection for data lines to

  • IEC61000-4-2(ESD) ±30KV(air), ±30KV(contact);

  • IEC61000-4-4 (EFT) 40A (5/50ns)

  • IEC61000-4-5 (Surge) 25A (8/20us)

Applications

  • Cellular phones,Portable devices,Digital cameras,Power supplies